Reduced-beak planox process for the formation of integrated elec

Details Reduced-beak planox process for the formation of integrated elec Reduced-beak planox process for the formation of integrated elec

1987-11-23

1990-01-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 70, 437228, 148DIG117, 148DIG131, 156643, 156653, H01L 21316

Patent

active

048973653

ABSTRACT:
A method for reducing birdbeaks formed during a planox process is disclosed. On a silicon substrate (1), oxide (2) and nitride (3) are formed. The oxide and nitride are then selectively etched using a single plasma having high selectivity with respect to silicon and a photoresist mask (4). The high selectivity toward silicon is achieved by use of a CHF.sub.3 +CO.sub.2 plasma under conditions of 30:1 oxide/silicon selectivity. Field oxide regions (5) with reduced birdbeaks can then be formed.

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