Reduced barrier photodiode/gate device structure for high...

Details Reduced barrier photodiode/gate device structure for high... Reduced barrier photodiode/gate device structure for high...

2006-11-21

2006-11-21

Picardat, Kevin (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S069000

Reexamination Certificate

active

07138287

ABSTRACT:
A pixel cell having a reduced potential barrier near a region where a gate and a photodiode are in close proximity to one another, and a method for forming the same are disclosed. Embodiments of the invention provide a pixel cell comprising a substrate. A gate of a transistor is formed at least partially below the surface of the substrate and a photodiode is adjacent to the gate. The photodiode comprises a doped surface layer of a first conductivity type, and a doped region of a second conductivity type underlying the doped surface layer. The doped surface layer is at least partially above a level of the bottom of the gate.

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