Reduced area metal contact to a thin polysilicon layer contact s

Details Reduced area metal contact to a thin polysilicon layer contact s Reduced area metal contact to a thin polysilicon layer contact s

1996-03-07

1997-09-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 67, 257 69, 257 74, 257756, 257903, H01L 2976, H01L 27108, H01L 2348, H01L 2711

Patent

active

056683804

ABSTRACT:
Reduced area metal contacts to a thin polysilicon layer contact structure having low ohmic resistance was achieved. The structure involves forming contact openings in an insulating layer over a buffer layer composed of a thick polysilicon layer. A portion of the sidewall in the opening includes a patterned thin polysilicon layer that forms part of a semiconductor device and also forms the electrical connection to the metal contact. The structure provides metal contacts having very low resistance and reduced area for increased device packing densities. The metal contact structure also eliminates the problem of forming P.sup.+ /N.sup.+ non-ohmic junctions usually associated with making P.sup.+ /N.sup.+ stacked contact. The structure further allows process steps to be used that provide larger latitude in etching the contact opening and thereby provides a structure that is very manufacturable.

REFERENCES:
patent: 5272103 (1993-12-01), Nakamura
patent: 5379251 (1995-01-01), Takeda et al.
patent: 5391894 (1995-02-01), Itabashi et al.

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