Reduced active area in a phase change memory structure

Details Reduced active area in a phase change memory structure Reduced active area in a phase change memory structure

2004-03-01

2010-12-28

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

C257S209000, C257SE29087, C257SE31008

Reexamination Certificate

active

07858980

ABSTRACT:
A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

REFERENCES:
patent: 6013547 (2000-01-01), Liaw
patent: 6967865 (2005-11-01), Lee
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 2002/0036931 (2002-03-01), Lowrey et al.
patent: 2003/0038301 (2003-02-01), Moore
patent: 2004/0026686 (2004-02-01), Lung
patent: 2004/0157416 (2004-08-01), Moore et al.
patent: 2005/0145984 (2005-07-01), Chen et al.
patent: 2006/0017076 (2006-01-01), Lankhorst et al.
patent: 2005-071954 (2005-04-01), None
patent: 2006001089 (2006-01-01), None

Affiliated with

Also associated with

Rating

Reduced active area in a phase change memory structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced active area in a phase change memory structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced active area in a phase change memory structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4184550