Reduced 1/f low frequency noise high electron mobility transisto

Details Reduced 1/f low frequency noise high electron mobility transisto Reduced 1/f low frequency noise high electron mobility transisto

1998-07-14

2000-12-12

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257194, H01L 31072

Patent

active

061602744

ABSTRACT:
A reduced 1/f low frequency noise high electron mobility transistor is obned based on the realization that in modulation-doped heterostructure transistors the inherent bandbending in the high bandgap material spacer layer allows certain trap energy levels to cross or approach the Fermi level at or near the 2DEG interface. For the case of AlGaAs/GaAs HEMTs or AlGaAs/InGaAs/GaAs pseudomorphic HEMTs the composition of the spacer layer is graded to provide for the conduction band energy to have a negative slope near the spacer layer/2DEG interface. This bandbending pulls interface trap energy levels away from the Fermi level and significantly reduces f.sub.t (1-f.sub.t) and the spectral density of the 1/f low frequency noise.

REFERENCES:
patent: 4827320 (1989-05-01), Morkoc et al.
patent: 4967242 (1990-10-01), Sonoda et al.
patent: 4987462 (1991-01-01), Kim et al.

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