Red light vertical cavity surface emitting laser

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 319

Patent

active

057967695

ABSTRACT:
A stack (103) of distributed Bragg reflectors is disposed on the surface (105) of a semiconductor substrate (102). The stack (103) includes a plurality of alternating layers of material having alternating refractive indexes with the stack (103) having a first dopant type. A first cladding region (104) is disposed on the stack (103) with an active area (106) disposed on the first cladding region (104). The active area (106) includes layers of indium aluminum gallium phosphide, indium gallium arsenide phosphide, and indium aluminum gallium phosphide. A second cladding region (107) is disposed on the active area (106) with a stack (108) of distributed Bragg reflectors disposed on cladding region (107). A contact region (109) is disposed on the stack (108).

REFERENCES:
patent: 5442203 (1995-08-01), Adomi et al.
patent: 5557627 (1996-09-01), Schneider, Jr. et al.
patent: 5675605 (1997-10-01), Fujii
patent: 5699375 (1997-12-01), Paoli

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