Patent
1975-07-25
1977-04-12
Edlow, Martin H.
357 16, 357 63, H01L 3300
Patent
active
040178803
ABSTRACT:
A red light emitting gallium phosphide device comprises an n-type substrate, an n-type layer formed on the substrate using a liquid phase epitaxial growth method, and a p-type layer formed on the n-type layer using the liquid phase epitaxial growth method, the donor concentration of the n-type layer ranging from 1.8 .times. 10.sup.17 cm.sup..sup.-3 to 5.8 .times. 10.sup.17 cm.sup..sup.-3.
REFERENCES:
patent: 3703671 (1972-11-01), Saul
patent: 3934260 (1976-01-01), Kasami
Kasami Akinobu
Kawachi Masaru
Mineo Hiroki
Edlow Martin H.
Tokyo Shibaura Electric Co. Ltd.
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