Red light-emitting device and method for preparing the same

Details Red light-emitting device and method for preparing the same Red light-emitting device and method for preparing the same

2006-10-03

2006-10-03

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S046000, C438S047000, C438S493000, C438S503000, C438S507000

Reexamination Certificate

active

07115427

ABSTRACT:
The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.

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Mykola Sopinskyy and Viktoriya Khomchenko, Electroluminescence in SiOx Films and SiOx-film-based Systems, Current Opinion in Solid State and Material Science, 7 (2003) 97-109.

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