Red, infrared, and blue stacked laser diode array by wafer fusio

Details Red, infrared, and blue stacked laser diode array by wafer fusio Red, infrared, and blue stacked laser diode array by wafer fusio

1998-01-07

2000-11-07

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 43, 372 68, 372 97, H01S 319

Patent

active

061446831

ABSTRACT:
An infrared laser structure is stacked on top of a red laser structure with both having an inverted or p-side down orientation. The red/infrared stack laser structure is inverted and wafer fused to a blue laser structure to form a red/infrared/blue monolithic laser structure. The top semiconductor layer of the inverted red/infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

REFERENCES:
R. K. Sink et al., "Cleaved GaN facets by wafer fusion of GaN to InP", Applied Physics Letters, vol. 68, No. 15, Apr. 8, 1996, pp. 2147-2149.
R. J. Ram et al., "GaAs to InP wafer fusion", Journal of Applied Physics, vol. 78, No. 6, Sep. 15, 1995, pp. 4227-4237.
Y. H. Lo, "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement", Applied Physics Letters, vol. 62, No. 10, Mar. 8, 1993, pp. 1038-1040.

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