Red and blue stacked laser diode array by wafer fusion

Details Red and blue stacked laser diode array by wafer fusion Red and blue stacked laser diode array by wafer fusion

1998-01-07

1999-07-06

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

438 34, 438 46, 438455, 438459, H01S 302

Patent

active

059207663

ABSTRACT:
A red laser structure has an inverted or p-side down orientation. The red laser structure is inverted and wafer fused to a blue laser structure to form a red/blue monolithic integrated laser structure. The top semiconductor layer of the inverted red laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

REFERENCES:
patent: 5802088 (1998-09-01), Otsuka et al.
R.K. Sink et al., "Cleaved GaN facets by wafer fusion of GaN to InP", Applied Physics Letters, vol. 68, No. 15, Apr. 8, 1996, pp. 2147 to 2149.
R.J. Ram et al.., "GaAs to InP wafer fusion", Journal of Applied Physics, vol. 78, No. 6, Sep. 15, 1995, pp. 4227 to 4237.
Y.H. Lo, "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement", Applied Physics Letters, vol. 62, No. 10, Mar. 8, 1993, pp. 1038 to 1040.

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