Recursive device for switching over a high potential greater...

Details Recursive device for switching over a high potential greater... Recursive device for switching over a high potential greater...

2006-12-19

2009-02-10

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S191000

Reexamination Certificate

active

07489559

ABSTRACT:
An embodiment of the invention pertains to an nthorder selector switch device comprising: a first arm comprising n transistors series-connected between a first input to which a 0-ranking potential is applied, and an output; and a second arm comprising n transistors series-connected between a second input to which a 0-ranking potential is applied, and the output. The device according to the invention also comprises: a means to produce n−1 potentials ranked 1 to n−1 included between the potential ranked 0 and the potential ranked n; and a driving means for the production, from the n+1 potentials ranked 0 to n, of control signals suited to driving the gates of the transistors of the first arm and the gates of the transistors of the second arm so that the transistors of one of the arms are on and the transistors of the other arm are off depending on the value of the n-ranking potential relative to the value of the 0-ranking potential.

REFERENCES:
patent: 5804996 (1998-09-01), Verhaeghe et al.
patent: 6040734 (2000-03-01), Villa et al.
patent: 6847249 (2005-01-01), Brokaw
patent: 2002/0024070 (2002-02-01), Fournel
patent: 2002/0030515 (2002-03-01), Garnier
French Search Report for FR 0512871 dated Sep. 14, 2006.

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