Rectilinear sputtering apparatus and method

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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204192R, C23C 1500

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active

042785286

ABSTRACT:
Sputtering apparatus in which a substrate passes through a sputtering chamber in a continuous rectilinear movement. The chamber is formed in a coffer-like vessel which has a closure and a body that are brought together into a sealing engagement to form the chamber. There is an air lock at opposite ends of the coffer for the substrate to enter and leave.
The sputtering conditions are provided by suitable gases, pumps, electrical connections and the like, these being admitted or led into the chamber. Electrode pairs are provided, one of each pair being mounted on the closure the other in the body to give good access thereto. The one mounted on the closure may be the anode and the other the cathode or vice versa. The sputtering is carried on with r.f. power.
The closure may be hinged.
For sputtering selectively, masks may be interposed between the targets and the anodes. Such masks will result in strip sputtering.
Especially for sputtering on substrates which are heat-sensitive, magnetic fields can be established in the sputtering gaps to sweep electrons out of the gap and prevent their impinging against the critical parts of the substrate.
Roller or drive systems may be provided in the coffer along with other apparatus.

REFERENCES:
patent: 3939052 (1976-02-01), Riley
patent: 4107350 (1978-08-01), Berg et al.
Aronson et al., "Inline Production Magnetron Sputtering", Vacuum, vol. 27, pp. 151-153 (1977).
B. J. Williams et al., "Practical Design Aspects of a Continuous Vacuum RF Sputtering Machine", J. Vac. Sci. Technology, vol. 7, pp. 278-281 (1970).
T. M. Byrne et al., "Continuous Parallel--Plate RF Sputtering System", IBM Tech. Disc. Bull., vol. 13, pp. 1034-1036 (1970).

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