Rectifying P-N junction having improved breakdown voltage charac

Details Rectifying P-N junction having improved breakdown voltage charac Rectifying P-N junction having improved breakdown voltage charac

1988-01-11

1990-01-02

Larkins, William D.

357 55, 357 13, 357 53, H01L 2912

Patent

active

048916854

ABSTRACT:
A rectifier is fabricated from a P-N junction having a P-type semiconductor layer and an adjacent N-type semiconductor layer. A mesa structure is formed in at least one of said layers. Impurities are deposited at the top of the mesa to form a high concentration region in the surface thereof. The impurities are diffused from the top surface of the mesa toward the P-N junction, whereby the mesa geometry causes the diffusion to take on a generally concave shape as it penetrates into the mesa. The distance between the perimeter of the high concentration region and the wafer substrate is therefore greater than the distance between the central portion of said region and the wafer substrate, providing improved breakdown voltage characteristics and a lower surface field. Breakdown voltage can be measured during device fabrication and precisely controlled by additional diffusions to drive the high concentration region to the required depth.

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B. Streetman, "Solid State Electronic Devices", 1980, Prentice Hall, Englewood Cliffs, N.J., pp. 163-164.

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