Recticle pattern applied to mix-and-match lithography...

Details Recticle pattern applied to mix-and-match lithography... Recticle pattern applied to mix-and-match lithography...

2006-09-21

2008-09-23

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C257S797000

Reexamination Certificate

active

07427459

ABSTRACT:
A recticle pattern applied to a mix-and-match lithography process is described. The recticle has a transparent region and a non-transparent region. The transparent region includes a device region and a scribe line region. The recticle pattern includes a plurality of device patterns, a portion of a first and a second set of alignment measure figures, and a set of overlay measure figures. The first and the second sets of the alignment measure figures are disposed on the scribe line region and the non-transparent region. The first and the second sets of the alignment measure figures respectively self-align to produce two sets of composite alignment measure figures after the exposure process. A set of overlay measure figures includes four rectangular boxes respectively disposed in the four areas formed in the corners of where the non-transparent region and the scribe line region meet to correct the overlay error caused by recticle rotation.

REFERENCES:
patent: 5952134 (1999-09-01), Hwang
patent: 63148627 (1988-06-01), None
patent: 9167734 (1997-06-01), None
patent: 508641 (2002-11-01), None

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