Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part
Reexamination Certificate
2005-11-24
2008-12-16
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With semiconductor element forming part
C257S077000, C257S705000, C257S713000, C257SE23110, C438S105000
Reexamination Certificate
active
07466019
ABSTRACT:
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack successively comprises a single-crystal diamond layer, an electrically insulating oxide layer and a semi-conducting layer. The support can comprise a second stack arranged on the rear surface of the substrate and comprising the same succession of layers as the first stack or comprising a polymer material layer. A thermal connection passing through the first and/or second stacks and connecting the graphite substrate to an external surface of the support enables heat to be removed. The method can comprise production of the semi-conducting layer by molecular bonding of rectangular silicon strips onto the oxide layer.
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Commissariat A l'Energie Atomique
Ho Tu-Tu V
Oliff & Berridg,e PLC
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