Semiconductor device manufacturing: process – Direct application of electrical current – To alter conductivity of fuse or antifuse element
Reexamination Certificate
2004-06-24
2008-10-28
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Direct application of electrical current
To alter conductivity of fuse or antifuse element
C438S131000, C438S132000, C438S215000, C438S281000, C438S333000, C438S601000, C438S600000, C438S957000, C257S700000, C257S758000, C257S529000, C257S530000, C257S209000, C257S211000, C257SE23149
Reexamination Certificate
active
07442626
ABSTRACT:
A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse element is constructed with a rectangular-shaped contact. The contact is made long enough so that it makes contact at each end with a metal layer, but design rule spacing is still maintained between the connections with the metal layer. The overlapping areas between the rectangular contact and the metal layers are asymmetrical. Alternatively, these overlapping areas are smaller than the design rule overlap requirements. In a second embodiment, a fuse element is constructed with a plurality of rectangular-shaped contacts. As a result, a current value that is significantly lower than conventional fuse current values, can be used to melt such a contact or blow the fuse.
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Brady III Wade J.
Dang Phuc T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Thanh Y
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