Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-02-24
2009-08-04
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000, C430S394000, C430S322000
Reexamination Certificate
active
07569308
ABSTRACT:
An optical lithography method is disclosed that uses double exposure of a reusable template mask and a trim mask to fabricate regularly-placed rectangular contacts in standard cells of application-specific integrated circuits (ASICs). A first exposure of the reusable template mask with periodic patterns forms periodic dark lines on a wafer and a second exposure of an application-specific trim mask remove the unwanted part of the dark lines and the small cuts of the dark lines left form the rectangular regularly-placed contacts. All contacts are placed regularly in one direction while unrestrictedly in the perpendicular direction. The regular placement of patterns on the template mask enable more effective use of resolution enhancement technologies, which in turn allows a decrease in manufacturing cost and the minimum contact size and pitch. Since there is no extra application-specific mask needed comparing with the conventional lithography method for unrestrictedly-placed contacts, the extra cost is kept to the lowest. The method of the invention can be used in the fabrication of standard cells in application-specific integrated circuits (ASICs) to improve circuit performance and decrease circuit area and manufacturing cost.
REFERENCES:
Tyrrell et al., Journal of Microlithography, Microfabrication and Microsystems, vol. 1, No. 3, pp. 243-252 (2002).
Fritze et al., Proceedings of SPIE, vol. 5042, pp. 15-29 (2003).
Wang et al., Proceedings of SPIE, vol. 5043, pp. 134-141 (2003).
Lam Edmund Y.
Wang Jun
Wong Alfred K.
Berkeley Law & Technology Group LLP
Huff Mark F
Sullivan Caleen O
The University of Hong Kong
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