Rectangular cavity magnetron sputtering vapor source

Details Rectangular cavity magnetron sputtering vapor source Rectangular cavity magnetron sputtering vapor source

1992-04-14

1994-01-11

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429809, 20429816, 20429818, 20419212, C23C 1434

Patent

active

052777790

ABSTRACT:
In a magnetron sputtering device for high rate coating of various substrates with sputtered atoms, the sputtering occurs from the interior cavity wall composed of four individual rectangular plates and condenses onto a substrate passing axially through the cavity. Most of the atoms which do not condense on the substrate redeposit on a wall and are subsequently sputtered resulting in efficient target utilization. A few percent, depending on the length of the cavity, escape out the end and are lost to the deposition process. The magnetic field through the cavity is uniform and relatively constant such that the four rectangular targets evenly erode. The two opposing ends of the cavity are open for substrate movement through the deposition region. The magnetic field is generated by a solenoid and allows adjustment for sputtering of magnetic materials.

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