Recrystallized three dimensional integrated circuit

Details Recrystallized three dimensional integrated circuit Recrystallized three dimensional integrated circuit

1982-08-24

1984-09-18

Larkins, William D.

Metal treatment

Stock

Ferrous

148 15, 357 23, 357 42, 357 4, 357 59, H01L 2704

Patent

active

044727291

ABSTRACT:
A stacked semiconductor IC device is disclosed which comprises a single-crystalline semiconductor substrate having planar surfaces with different height and a slant surface, a single-crystalline semiconductive layer which is epitaxially grown from the substrate on or above the substrate, and which has planar surfaces with different height and a slant surface and a substantially uniform thickness, groups of semiconductor elements each formed on the low planar surface of the substrate and on the low planar surface of the layer, and contact wiring pattern passing through the slant portion of the layer to electrically connect the element groups.

REFERENCES:
patent: 3564358 (1971-02-01), Hahnlein
patent: 4314858 (1982-02-01), Tomasetta et al.
patent: 4381201 (1983-04-01), Sakurai

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