Etching a substrate: processes – Gas phase etching of substrate – Etching a multiple layered substrate where the etching...
Patent
1996-02-22
1997-12-16
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Etching a multiple layered substrate where the etching...
216 67, 216 75, 216 79, 427534, 427535, C23C 1458
Patent
active
056981139
ABSTRACT:
Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.
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Baker Sherry L.
Stearns Daniel G.
Vernon Stephen P.
Alanko Anita
Breneman R. Bruce
Sartorio Henry P.
The Regents of the University of California
Wooldridge John P.
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