Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-01-04
2011-01-04
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
Reexamination Certificate
active
07864581
ABSTRACT:
A NAND flash memory device is recovered by applying a predetermined bias to a drain or a source. A negative bias is applied to a cell gate so that electrons are injected into a floating gate of a cell. This narrows the distribution of an erase threshold voltage and minimizes interference from states of peripheral cells.
REFERENCES:
patent: 5963475 (1999-10-01), Choi et al.
patent: 6434055 (2002-08-01), Tanaka et al.
patent: 2003/0112660 (2003-06-01), Lin et al.
patent: 10-1995-0000273 (1995-01-01), None
patent: 10-2000-0004214 (2000-01-01), None
Ho Hoai V
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
Tran Anthan T
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