Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2007-10-23
2007-10-23
Phan, Trong (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S200000, C365S230030, C365S230060
Reexamination Certificate
active
11240304
ABSTRACT:
An embodiment of the present invention is a technique to provide a reconfigurable repair circuit in a memory device. A table structure contains a plurality of entries, each entry having a defective address word and a redundant address word. The redundant address word corresponds to a redundant block and is generated in response to a memory access to a defective input/output (I/O) line in a memory block of the memory device. A decoding circuit decodes the redundant address word to select a redundant I/O line in the redundant block to replace the defective I/O line.
REFERENCES:
patent: 5347484 (1994-09-01), Kwong et al.
patent: 5438546 (1995-08-01), Ishac et al.
patent: 6219286 (2001-04-01), Fuchigami et al.
patent: 6888764 (2005-05-01), Shiga et al.
patent: 7073102 (2006-07-01), Nicolaidis
patent: 2003/0035322 (2003-02-01), Wong
patent: 0797145 (1997-09-01), None
patent: 1058192 (2000-12-01), None
patent: WO 96/34391 (1996-10-01), None
Dodge Richard Keith
Hsu Pochang
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Phan Trong
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