Recognition method of a mark provided on a semiconductor device

Details Recognition method of a mark provided on a semiconductor device Recognition method of a mark provided on a semiconductor device

2005-03-22

2005-03-22

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S620000

Reexamination Certificate

active

06869819

ABSTRACT:
A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 μm to 50 μm. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.

REFERENCES:
patent: 5430325 (1995-07-01), Sawada et al.
patent: 6297131 (2001-10-01), Yamada et al.
patent: 3-23646 (1991-01-01), None
patent: 6-244245 (1994-09-01), None

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