Recessed semiconductor device

Details Recessed semiconductor device Recessed semiconductor device

2007-06-12

2007-06-12

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C438S572000, C438S573000, C438S574000, C438S576000

Reexamination Certificate

active

10925855

ABSTRACT:
A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A first conductive portion is coupled to the first semiconductor layer, and a second conductive portion is formed over the first semiconductor layer.

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U.S. Appl. No. 10/881,162, filed Jul. 13, 2004.

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