Recessed gate static induction transistor fabrication

Details Recessed gate static induction transistor fabrication Recessed gate static induction transistor fabrication

1984-01-23

1984-10-16

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148187, H01L 21265

Patent

active

044766220

ABSTRACT:
A gate-source structure and fabrication method for a static induction transistor having improved gain and frequency characteristics and having relatively simple fabrication requirements. The method and the device are embodied by gate regions diffused into the bottom of parallel recessed grooves located in a high resistivity epitaxial semiconductor layer, the surface of the semiconductor layer having a previously diffused source region located between the recessed grooves. The walls of the recessed grooves are covered with silicon dioxide.

REFERENCES:
patent: 3938241 (1976-02-01), George et al.
patent: 3999281 (1976-12-01), Goronkin et al.
patent: 4115793 (1978-09-01), Nishizawa
patent: 4199771 (1980-04-01), Nishizawa et al.
patent: 4356041 (1982-10-01), Kosa
patent: 4375124 (1983-03-01), Cogan

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