Recessed-gate junction-MOS field effect transistor

Details Recessed-gate junction-MOS field effect transistor Recessed-gate junction-MOS field effect transistor

1986-10-27

1988-09-06

Larkins, William D.

357 231, 357 237, 357 2312, 357 2314, 357 22, 357 55, 357 41, H01L 2978, H01L 2950, H01L 2906, H01L 2702

Patent

active

047696850

ABSTRACT:
An insulated gate field effect transistor of the depletion mode type has a recessed gate structure with opposed gate sections on opposite sides of adjacent bar-like structures defined in a channel region. An opposite conductivity-type island in the channel region is electrically connected to the transistor gate electrode. A voltage applied to the gate electrode generates an electric field effect which extends from the opposed gate sections into said bar-like structures creating opposed depletion regions which modulate channel current. The gate voltage simultaneously biases the island to enhance the gate electric field effect by removing minority charge carriers which would otherwise accumulate in the bar-like structures.

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