Recessed gate field effect transistor

Details Recessed gate field effect transistor Recessed gate field effect transistor

1996-01-05

1997-10-07

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257473, H01L 29812

Patent

active

056751591

ABSTRACT:
A semiconductor device includes a compound semiconductor body having a recess, the recess having a bottom and a hollow, and a refractory metal gate electrode having a lower portion within the hollow. The compound semiconductor body includes a compound semiconductor substrate; a channel layer including a compound semiconductor of a first conductivity type, the channel layer being located on the substrate between the gate electrode and the substrate; first active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor and of the first conductivity type located on regions of the substrate in the recess where the channel layer is not present; and second active layers of the compound semiconductor of the first conductivity type located on regions of the substrate sandwiching the recess. Therefore, the controllable region in the channel layer is not adversely affected by a depletion layer produced at the interface between the first active layers and a passivation film, whereby an unwanted reduction in the control speed in the channel layer due to the charging and discharging of carriers in traps at the interface is avoided.

REFERENCES:
patent: 4160984 (1979-07-01), Ladd et al.
patent: 4845534 (1989-07-01), Fukuta
patent: 4889827 (1989-12-01), Willer
patent: 4984036 (1991-01-01), Sakamoto et al.
patent: 5409849 (1995-04-01), Kishita et al.
patent: 5536967 (1996-07-01), Yokoyama
patent: 5539228 (1996-07-01), Chi
patent: 5548144 (1996-08-01), Kohno
Takahashi et al, "Step-Recessed Gate GaAs FETs With An Undoped Surface Layer", IEEE Electron Devices Society, vol. IEDM 91-259, 1991, pp. 9.8.1-9.8.4 No month.

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