Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-11-07
2009-10-20
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S465000, C257SE31022
Reexamination Certificate
active
07605406
ABSTRACT:
A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.
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Fish & Richardson P.C.
Sumitomo Electric Industries Ltd.
Wilson Allan R.
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