Patent
1987-03-19
1988-12-27
James, Andrew J.
357 55, 357 56, 357 16, 357 58, H01L 2714
Patent
active
047944390
ABSTRACT:
A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.
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Uwai et al., "Er-Doped InP and GaAs Grown by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., vol. 51, No. 13, Sep. 28, 1987, 1010-1012.
Tomaseha, "GaAs Optical Electronic Devices for Signal Processing Applications," SPIE Guided Wave Optical Systems & Devices II (1979); Conference: Washington, DC, 17-18, Apr. 1979, pp. 111-114.
Susa et al., "Characteristics in InGaAs/InP Avalanche Photodiodes with Separated Absorption and Multiplication Regions," IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 243-249.
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Appert John R.
Enstrom Ronald E.
Webb Paul P.
Davis Jr. James C.
General Electric Company
James Andrew J.
Mintel William A.
Steckler Henry I.
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