Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2011-06-21
2011-06-21
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
With measuring or testing
C438S095000, C438S102000, C257SE21530
Reexamination Certificate
active
07964418
ABSTRACT:
A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.
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Achutharaman Vedapuram S.
Chang Wen
Dixit Tarpan
Kraus Philip
Dang Trung
Jones Day
Lovejoy Brett
Solyndra LLC
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