Real time particle monitor inside of plasma chamber during...

Details Real time particle monitor inside of plasma chamber during... Real time particle monitor inside of plasma chamber during...

2005-08-02

2005-08-02

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S025000

Reexamination Certificate

active

06924157

ABSTRACT:
One aspect of the present invention relates to a system and method for controlling defect formation during a resist strip process. The system includes a reaction chamber comprising a patterned resist layer overlying a semiconductor structure wherein the resist layer is being exposed to a plasma material flowing into the chamber in order to facilitate removing the resist layer from the structure, a plasma-resist particle monitoring system connected to the reaction chamber and programmed to determine a particle count in the reaction chamber during the resist strip process, and a reaction controller coupled to the chamber and to the monitoring system, the reaction controller being programmed to receive particle data from the monitoring system to facilitate determining whether the counted particles in the chamber are within a tolerable limit. The method involves continuing to expose the structure and the chamber to the plasma until an acceptable particle count is obtained.

REFERENCES:
patent: 4896048 (1990-01-01), Borden
patent: 5248636 (1993-09-01), Davis et al.
patent: 5401356 (1995-03-01), Enami et al.
patent: 6043004 (2000-03-01), Kurimoto
patent: 6564811 (2003-05-01), Timperio et al.

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