Real-time multi-zone semiconductor wafer temperature and process

Details Real-time multi-zone semiconductor wafer temperature and process Real-time multi-zone semiconductor wafer temperature and process

1994-10-28

1997-06-03

Niebling, John

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

374124, 374128, 2503414, 438 16, H01L 2100

Patent

active

056354096

ABSTRACT:
A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements. A scatter module (116) also provides input to process control circuitry (150) for real-time emissivity compensation of the pyrometry-based temperature measurements of semiconductor wafer (60).

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