Real-time mathematical model for wafer spin defect detection...

Details Real-time mathematical model for wafer spin defect detection... Real-time mathematical model for wafer spin defect detection...

2006-10-24

2006-10-24

Wachsman, Hal (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Mechanical measurement system

C702S036000, C702S081000, C702S083000, C703S002000

Reexamination Certificate

active

07127359

ABSTRACT:
According to various embodiments, there is a method of inspecting semiconductor wafers comprising comparing a value for each wafer in a lot of wafers to a mathematical model, where the values include data about at least one feature on the wafers, and where the mathematical model comprises a threshold value corresponding to the at least one feature, and further where values greater than the threshold value comprise an indication of a spin defect. The method can also comprise determining whether any of the values of the wafers in the lot are not greater than the threshold value, grouping into a group (P) those wafers whose values are not greater than the threshold value, and flagging for further inspection those wafers having values greater than the threshold value.

REFERENCES:
patent: 5664987 (1997-09-01), Renteln
patent: 6100101 (2000-08-01), Marathe et al.
patent: 6185472 (2001-02-01), Onga et al.
patent: 6723574 (2004-04-01), Bailey et al.

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