Real-time in-line testing of semiconductor wafers

Details Real-time in-line testing of semiconductor wafers Real-time in-line testing of semiconductor wafers

2006-10-10

2006-10-10

Tang, Minh N. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S750010, C324S754120

Reexamination Certificate

active

07119569

ABSTRACT:
A method and apparatus for measuring damage of an ion implanted semiconductor wafer during semiconductor processing. The method includes the steps of conveying the wafer such that a surface of the wafer is substantially parallel to a surface photovoltage electrode of a head assembly during the semiconductor processing and exposing at least a portion of the wafer to light having a wavelength, and an intensity and modulating the light intensity at a predefined frequency. The method also includes the step of varying the frequency of the light intensity modulation and detecting the surface photovoltage in response to light modulated at the various frequencies using the surface photovoltage electrode. The method then calculates an electrical property of the wafer from the photovoltage induced at the surface of the wafer at each of the light intensity modulation frequencies.

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