Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1997-10-14
2000-04-25
Powell, William
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
438 14, 438 16, 216 60, H01L 2100
Patent
active
060543337
ABSTRACT:
A method is provided for determining etching characteristics during gas phase etching of thin film materials such as semiconductors during manufacture of devices. Etch end point, rate of etching, uniformity of etching and uniformity of growth of thin films can be determined. Isotopically enriched materials are deposited in layers which may be only a few nanometers thick at selected locations during growth of the thin films. The isotopes are removed during gas phase etching, carried by gas into an analysis chamber, condensed on a surface, and analyzed for isotopical composition. Mass spectroscopy of recoiled ions is a preferred detection technique.
REFERENCES:
Hammond, Schultz and Krauss, "Surface Analysis at Low to Ultrahigh Vacuum by Ion Scattering and Direct Recoil Spectroscopy", J. Vac. Sci. Technology A, 13, 1136, (1995).
Waters, Bensaoula, Schultz, Eipers-Smith, And Freundlich, "In-Situ Doping and Composition Monitoring for Molecular Beam Epitaxy Using Mass Spectroscopy of Recoiled Ions", J. Crys. Growth 127 (1993) 972-975.
Frees, "New In-Situ Monitoring Technology", Semiconductor Fabtech, 149-151.
Haller, "Isotopically Engineered Semiconductor", J. Appl. Phys. 77 (1995) 2857-2878.
Powell William
University of Houston
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