Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-16
2010-02-16
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185250, C365S185210, C365S185100
Reexamination Certificate
active
07663927
ABSTRACT:
A reference voltage generator for a matrix of non-volatile memory cells of the EEPROM type, comprises at least one array enabled by an access transistor. The array comprises at least one reference cell associated with a relative select transistor, the transistors and the cell being realized on a semiconductor substrate and having active regions delimited by suitable field oxide regions and covered by a tunnel oxide layer and comprising at least one floating gate realized by a first polysilicon layer and covered by a dielectric layer and by a second polysilicon layer. Advantageously, the floating gate of the reference cells is contacted by a first contact terminal connected to a discharge transistor for the periodical discharge of possibly present charges. A process manufactures such a voltage generator.
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Annunziata Roberto
Palumbo Elisabetta
Zompi Daniele
Zuliani Paola
Jorgenson Lisa K.
Nguyen Viet Q
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Tarleton E. Russell
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