Reading voltage generator for a non-volatile EEPROM memory...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185050, C365S185250, C365S185210, C365S185100

Reexamination Certificate

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07663927

ABSTRACT:
A reference voltage generator for a matrix of non-volatile memory cells of the EEPROM type, comprises at least one array enabled by an access transistor. The array comprises at least one reference cell associated with a relative select transistor, the transistors and the cell being realized on a semiconductor substrate and having active regions delimited by suitable field oxide regions and covered by a tunnel oxide layer and comprising at least one floating gate realized by a first polysilicon layer and covered by a dielectric layer and by a second polysilicon layer. Advantageously, the floating gate of the reference cells is contacted by a first contact terminal connected to a discharge transistor for the periodical discharge of possibly present charges. A process manufactures such a voltage generator.

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patent: 7423898 (2008-09-01), Tanizaki et al.

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