Reading circuit, reference circuit, and semiconductor memory...

Details Reading circuit, reference circuit, and semiconductor memory... Reading circuit, reference circuit, and semiconductor memory...

2005-08-16

2005-08-16

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S207000, C365S208000, C365S185030, C365S185200

Reexamination Certificate

active

06930922

ABSTRACT:
A reading circuit, for reading data from one memory cell of a plurality of memory cells, includes a plurality of division sensing circuits each connected to the one memory cell via a sensing line corresponding thereto among a plurality of sensing lines; and a current-voltage conversion circuit for converting a current flowing through each sensing line into a sensing voltage representing a potential of the corresponding sensing line. Each division sensing circuit includes a current load circuit for supplying a current to the one memory cell via a corresponding sensing line, and a sense amplifier for sensing a potential difference between the corresponding sensing line and a corresponding reference line of a plurality of reference lines. The current load circuit included in at least one division sensing circuit has a current supply capability different from that of the current load circuit included in another division sensing circuits.

REFERENCES:
patent: 6118701 (2000-09-01), Uekubo
patent: 6233189 (2001-05-01), Tanzawa et al.
patent: 6301149 (2001-10-01), Micheloni et al.
patent: 6445616 (2002-09-01), Kim

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