Reading and writing method for non-volatile memory with...

Details Reading and writing method for non-volatile memory with... Reading and writing method for non-volatile memory with...

2006-10-27

2008-12-09

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S149000

Reexamination Certificate

active

07463524

ABSTRACT:
The invention provides a reading method for a memory with multiple data states by applying a plurality of reading signals to an MIM element coupled to a memory cell. The logic level of the data stored in the memory cell is determined based on the number of the reading signals required to switch the state of the MIM element from a first state to a second state.

REFERENCES:
patent: 5329485 (1994-07-01), Isono et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6673691 (2004-01-01), Zhuang et al.
patent: 2006/0083098 (2006-04-01), Ho
patent: 2007/0268744 (2007-11-01), Taguchi

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