Read sensor with a uniform longitudinal bias stack

Details Read sensor with a uniform longitudinal bias stack Read sensor with a uniform longitudinal bias stack

2008-05-28

2009-08-04

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07570462

ABSTRACT:
A read sensor with a uniform longitudinal bias (LB) stack is proposed. The read sensor is a giant magnetoresistance (GMR) sensor used in a current-in-plane (CIP) or a current-perpendicular-to-plane (CPP) mode, or a tunneling magnetoresistance (TMR) sensor used in the CPP mode. The transverse pinning layer of the read sensor is made of an antiferromagnetic Pt—Mn, Ir—Mn or Ir—Mn—Cr film. In one embodiment of this invention, the uniform LB stack comprises a longitudinal pinning layer, preferable made of an antiferromagnetic Ir—Mn—Cr or Ir—Mn film, in direct contact with and exchange-coupled to sense layers of the read sensor. In another embodiment of the present invention, the uniform LB stack comprises the Ir—Mn—Cr or Ir—Mn longitudinal pinning layer exchange coupled to a ferromagnetic longitudinal pinned layer, and a nonmagnetic antiparallel-coupling spacer layer sandwiched between and the ferromagnetic longitudinal pinned layer and the sense layers.

REFERENCES:
patent: 7242556 (2007-07-01), Gill
patent: 7397637 (2008-07-01), Gill
patent: 2005/0280957 (2005-12-01), Gill
patent: 2006/0044708 (2006-03-01), Gill

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