Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-01-22
2008-01-22
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S185030
Reexamination Certificate
active
11616764
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
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Chen Jian
Li Yan
Nguyen Tuan T.
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
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