Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-06
2007-03-06
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S238500
Reexamination Certificate
active
11099049
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
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Chen Jian
Li Yan
Nguyen Tuan T.
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
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