Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-04-19
2009-10-20
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185250, C365S203000
Reexamination Certificate
active
07606075
ABSTRACT:
Non-volatile memory devices utilizing a NAND architecture are adapted to perform read operations where a first potential is supplied to source lines associated with a selected block of an array of memory cells and a second, different, potential is supplied to other source lines not associated with that block. By supplying a different potential to source lines of unselected blocks, current leakage can be mitigated.
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Aritome Seiichi
Goda Akira
Byrne Harry W
Dinh Son
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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