Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-01
2011-03-01
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185210, C365S185230, C365S185030, C365S185120
Reexamination Certificate
active
07898864
ABSTRACT:
A read operation for non-storage elements compensates for floating gate-to-floating gate coupling and effects of program-erase cycles. During programming of a word line WLn+1, the threshold voltages of previously-programmed storage elements on WLn are increased due to coupling. To compensate for the increase, during a subsequent read operation of WLn, different sets of pass voltages are applied to WLn+1 for each control gate read voltage which is applied to WLn. The pass voltages vary in each different set so that they are a function of the control gate read voltage which is applied to WLn. The pass voltages may also be a function of a number of program-erase cycles. A higher amount of compensation is provided by increasing the pass voltages as the number of program-erase cycles increases.
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Graham Kretelia
Ho Hoai V
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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