Read only semiconductor memory device with polysilicon drain ext

Details Read only semiconductor memory device with polysilicon drain ext Read only semiconductor memory device with polysilicon drain ext

1984-11-27

1987-03-10

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 239, 357 2312, 357 59, 357 71, 365104, 148DIG82, H01L 2978, H01L 2704, G11C 1140

Patent

active

046494120

ABSTRACT:
A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

REFERENCES:
patent: 4193125 (1980-03-01), Moriya
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4558343 (1985-12-01), Ariizumi et al.
"Late Implant Turns ROMs Around Fast," Electronics, May 31, 1983, pp. 50-51.

Affiliated with

Also associated with

Rating

Read only semiconductor memory device with polysilicon drain ext does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read only semiconductor memory device with polysilicon drain ext, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read only semiconductor memory device with polysilicon drain ext will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1024301