Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-07-09
1978-02-07
Miller, Jr., Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 14, 357 68, 307221D, H01L 2978
Patent
active
040729770
ABSTRACT:
The specification discloses a read only memory constructed from a charge coupled device having a channel for storage of charges in bit regions defined along the channel. Various structures are disclosed for storing combinations of two different levels of charge in the bit regions. In one embodiment, storage gates which communicate at spaced points along the length of the CCD channel are provided with different widths to control the level of charge input by the storage gates to the channel bit regions. In alternate embodiments, the semiconductor doping or oxide thickness of the storage gates are controlled in order to cause different levels of charge to be stored in the channel gate bit regions. After storage of the different charge levels in the channel, phase electrodes which span the channel are operated to serially output the charge levels from the channel to provide a predetermined digital word.
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Bate Robert T.
Caywood John M.
Clawson Jr. Joseph E.
Comfort James T.
Fassbender Charles J.
Miller, Jr. Stanley D.
Texas Instruments Incorporated
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