Read only memory utilizing charge coupled device structures

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 14, 357 68, 307221D, H01L 2978

Patent

active

040729770

ABSTRACT:
The specification discloses a read only memory constructed from a charge coupled device having a channel for storage of charges in bit regions defined along the channel. Various structures are disclosed for storing combinations of two different levels of charge in the bit regions. In one embodiment, storage gates which communicate at spaced points along the length of the CCD channel are provided with different widths to control the level of charge input by the storage gates to the channel bit regions. In alternate embodiments, the semiconductor doping or oxide thickness of the storage gates are controlled in order to cause different levels of charge to be stored in the channel gate bit regions. After storage of the different charge levels in the channel, phase electrodes which span the channel are operated to serially output the charge levels from the channel to provide a predetermined digital word.

REFERENCES:
patent: 3654499 (1972-04-01), Smith
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3806772 (1974-04-01), Early
patent: 3811055 (1974-05-01), Weimer
patent: 3863065 (1975-01-01), Kosonocky et al.
patent: 3864722 (1975-02-01), Carnes
patent: 3876952 (1975-04-01), Weimer
patent: 3877056 (1975-04-01), Bailey
patent: 3911467 (1975-10-01), Levine et al.
J. Tartamella, "Control-Charged Device Shift Register," IBM Tech. Discl. Bull., vol. 15, #5, Oct. 1972, p. 1461.
D. Collins et al., "Analog Matched Filters Using Charge Coupled Devices, " Nerem 72 Record, vol. 14, L.C. #61-3749, Nov. 72, pp. 165-167.
P. Richman, "MOS Field Effect Transistors and Integrated Circuits," Wiley-Interscience, 1973, pp. 56-63, and attachment.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Read only memory utilizing charge coupled device structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read only memory utilizing charge coupled device structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read only memory utilizing charge coupled device structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1403434

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.