Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-02-23
2008-09-09
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S148000, C365S094000
Reexamination Certificate
active
07423905
ABSTRACT:
A read-only memory (ROM) is disclosed that uses the presence or absence of linear passive electrical elements, such as resistors or capacitors, to encode zeros and ones, permitting a large-area ROM to be fabricated, possibly on a flexible substrate. The ROM includes a substrate, a plurality of row conductors insulated from each other and at least partially layered on a portion of the substrate; a plurality of column conductors insulated from each other and from the row conductors and at least partially layered above or below a portion of the plurality of row conductors, a plurality of amplifiers electrically connected to the column conductors, and at least one linear passive element attached between the row conductors and the column conductors. An amplifier connected to a column conductor has an input impedance much lower than the combined parallel impedance of the linear passive elements connected to that column, thus comprising a virtual ground, and is operable to output a first logical state when one of the linear passive elements is electrically connected between one of the row conductors and one of the column conductors, and operable to output a second local state when said one of the linear passive elements is absent between one of the row conductors and one of the column conductors. The resistive or capacitive arrays can be made into low-cost imagers if the resistors/capacitors are sensitive to electromagnetic radiation or mechanical pressure.
REFERENCES:
patent: 4839859 (1989-06-01), Moonpenn et al.
patent: 5536968 (1996-07-01), Crafts et al.
patent: 6570795 (2003-05-01), Fricke et al.
patent: 6587370 (2003-07-01), Hirai
patent: 7180495 (2007-02-01), Matsueda
patent: 2004/0085463 (2004-05-01), Sharma et al.
patent: 2005/0141263 (2005-06-01), Umeda et al.
patent: 2006/0139993 (2006-06-01), Kang et al.
patent: 2008/0025132 (2008-01-01), Fasoli et al.
patent: 2008/0025134 (2008-01-01), Scheuerlein et al.
Firester Arthur Herbert
Gu Gong
Kane Michael G.
Lowenstein & Sandler PC
Nguyen Dang T
Sarnoff Corporation
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