Read only memory for storing multi-data

Details Read only memory for storing multi-data Read only memory for storing multi-data

1991-08-13

1994-02-22

LaRoche, Eugene R.

Static information storage and retrieval

Read only systems

Semiconductive

365181, 365 94, 36518911, G11C 1700

Patent

active

052894061

ABSTRACT:
A read only memory includes a memory cell provided at an intersection between a word line and a bit line, and a plurality of reference potential transmission lines each receiving a reference potential determined in accordance with an externally applied potential designating signal. The memory cell includes a transistor element having a gate coupled to a word line, a drain coupled to a bit line and a source which is coupled to one of the reference potential transmission lines or is held in an open state. Stored data in the memory cell is changed by switching the potentials of the reference potential transmission lines. This enables storing of different data bits in one memory cell.

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patent: 4773047 (1988-09-01), Uchino et al.
patent: 4831593 (1989-05-01), Kubota et al.
"Asynchronous circuits accelerate access to 256-K read-only memory", F. A. Scherpenberg et al., Electronics/Jun. 2, 1982, pp. 141-145.
Principles of CMOS VLSI Design, A Systems Perspective, Weste et al., pp. 354-355 "Nikkei Electronics", No. 492, Feb. 4, 1990, pp. 171-177.

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