Read only memory device including a superconductive electrode

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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365160, 365 94, 365104, 505700, 505706, 505831, 505841, G11C 1144

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049904892

ABSTRACT:
A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.

REFERENCES:
patent: 3500344 (1970-03-01), LaCroix
patent: 3629863 (1971-12-01), Neale
patent: 3641517 (1972-02-01), Brilman et al.
patent: 3691539 (1972-09-01), Erber et al.
patent: 4238839 (1980-12-01), Redfern et al.
patent: 4336523 (1982-01-01), Jaggi
patent: 4360898 (1982-11-01), Faris
patent: 4384345 (1983-05-01), Mikome
patent: 4633439 (1986-12-01), Harada
IBM Tech. Discl. Bull., vol. 21, No. 1, Jun. 78, pp. 406-407, "Flux Programmable Memories" by Faris.
IEEE Transaction on Magnetics, vol. MaG-15, No. 1, Jan. 79, pp. 486-487, "*** Josephson Logic & Memory Applications", by Jillie.
J P Journal of Applied Physics, vol. 26, No. 5, May 87, pp. L699-L700, "Metallurgical Analysis of Mix-Phase V-Ba-Cu Oxides" by Takagi.
ISSCC 77, Feb. 16, 77, PROM, A 1024 Bit, Fused-Link, pp. 190-191, CMOS PROM, IEEE (Solid State Circuit Conference) by Schroeder.
Nature, vol. 327, May 28, 1987, Superconductive Ceramics by Welch et al., pp. 278-279.
Microwave & RF, Jul. 87, Superconductivity, pp. 35-43, by Brus.
Advanced Ceramics, vol. 2, No. 3B, Jul. 87, pp. 421-429 by Cuomo et al.
IEEE Electron Device Letters, vol. EDL-8, No. 12, Dec. 87, pp. 582-585, Superconductors, by Kwon et al.
IEEEE Int'l Sol. St. Circuits Conf.: "MAS-ROM--Electrically--Reprogramma ROM with Decoder" by K. Onoda et al., Session V: Memory 11, 2/16/72, pp. 54-55.
Jap. J. of Appl. Phys.: "Superconductivity at 95 K in New Yb-Ba-Cu Oxide System", by K. Kitazawa et al., vol. 26, No. 4, 4/87, pp. L339-L341.
Jap. J. of Appl. Phys.: "High Resolution Transmission Electron Microscopy of Defects in High Te Superconductor BaYCuO", by Y. Matsui et al., vol. 26, #5, 5/87, pp. L777-L779.
Jap. J. of Appl. Phys.: "High Te Y-Ba-Cu-O Thin Films Prepared by Dual Magmetron Sputtering", by H. Asano et al, vol. 26, #7, 7/87, pp. L1221-L1222.
J. Vac. Sci. Technol.: "Integrated Circuit Repair Using Focused Ion Beam Milling", by L. R. Harriott et al, B4 (1) Jan./Feb. 1986, pp. 181-184.
J. Appl. Phys.: "Characteristics of Rapid Thermal Annealing in Ion-Implanted Silicon", by O. W. Holland et al, 59 (3), Feb. 1, 1986, pp. 905-909.

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