Read-only memory device coded with selectively insulated...

Details Read-only memory device coded with selectively insulated... Read-only memory device coded with selectively insulated...

2007-03-20

2007-03-20

Ha, Nathan W. (Department: 2814)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C257S209000

Reexamination Certificate

active

10601958

ABSTRACT:
During fabrication of a mask read-only memory (ROM) device, a dielectric layer is grown on a substrate. Strip-stacked layers are formed on the dielectric layer, with each strip-stacked layer including a polysilicon and a silicon nitride layer. Source/drain regions are formed in the substrate between the strip-stacked layers, and spacers are then deposited between the strip-stacked layers. The strip-stacked layers are patterned into gates, which are disposed over every code position, with silicon nitride pillars being disposed on the gates. Additional spacers are formed on gate sidewalls. The silicon nitride pillars are removed, exposing the gates. A mask is then formed to cover active code positions, in accordance with the desired programming code. Insulating layers are then deposited through the mask onto the exposed gates. When the mask is removed, word lines are formed, interconnecting the gates without the insulating layers.

REFERENCES:
patent: 5812448 (1998-09-01), Wen
patent: 6046482 (2000-04-01), Lu et al.
patent: 2002/0033495 (2002-03-01), Kim
patent: 2003/0213992 (2003-11-01), Kubo
patent: 2003/0228717 (2003-12-01), Li et al.
patent: 2003/0235941 (2003-12-01), Chen
patent: 2004/0029347 (2004-02-01), Chang et al.
patent: 2004/0119106 (2004-06-01), Hsieh

Affiliated with

Also associated with

Rating

Read-only memory device coded with selectively insulated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read-only memory device coded with selectively insulated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read-only memory device coded with selectively insulated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3786832