Read-only memory cell

Details Read-only memory cell Read-only memory cell

1993-01-07

1994-03-01

LaRoche, Eugene R.

Static information storage and retrieval

Read only systems

Semiconductive

257390, G11C 1710

Patent

active

052914356

ABSTRACT:
A Read-Only semiconductor memory cell includes: a semiconductor substrate and a source and a drain formed on one surface of the substrate; a channel region, which is in between source and drain regions on the surface of the substrate, is controlled by X-control gate XCG and Y-control gate YCG which are formed on the surface of the substrate and isolated from each other and from source and drain regions and from semiconductor substrate through insulating films. Multiple levels of threshold voltages of the cells exist for ROM codes. The cell structure provide a means for accurate cell current during read, and is simpler for peripheral control circuit design and is contactless, fieldless, suitable for high reliable Mega-bit memory devices.

REFERENCES:
patent: 4503519 (1985-03-01), Arakawa
patent: 4554643 (1985-11-01), Kuo
patent: 4603341 (1986-07-01), Bertin
patent: 4630089 (1986-12-01), Sasaki et al.
patent: 4630237 (1986-11-01), Miura
patent: 4707718 (1987-11-01), Sakai
patent: 4958317 (1990-09-01), Terada et al.
patent: 5020025 (1991-05-01), Nix
patent: 5111428 (1992-05-01), Liang
patent: 5117389 (1992-05-01), Yiu

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